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- W2067101099 abstract "The effect of the energy overlap integral, due to the partial overlap of the adjacent wave functions of impurities, on the dielectric response ε of n-type semiconductor is examined. The proposed model suggests that ε diverges as the overlap increases, i.e. as the impurity concentration n is increased and essentially goes to a non-vanishing value as n approaches a critical value n c , defining the insulator-metal transition. It also predicts that ε→k (the host material dielectric constant) when n becomes low enough such that the impurity contribution to ε is negligibly small." @default.
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- W2067101099 title "ESTIMATION OF THE EFFECTIVE DIELECTRIC RESPONSE FROM HOPPING ACTIVATION ENERGY IN THE VICINITY OF INSULATOR-METAL TRANSITION IN SEMICONDUCTORS" @default.
- W2067101099 doi "https://doi.org/10.1142/s0217979296000040" @default.
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