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• W2067138483 startingPage "1585" @default.
• W2067138483 abstract "The solid composition of GaAs 1- x Sb x and In y Ga 1- y As grown on a stepped surface by molecular beam epitaxy is discussed. The experimental results show that the concentration of Sb or In in the epitaxial layer decreases rapidly with the growth temperature and that Sb becomes lower and In higher in concentration with increasing off-angle from the (100) surface. In order to explain these phenomena, the BCF theory is successfully applied." @default.
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• W2067138483 date "1988-09-01" @default.
• W2067138483 modified "2023-10-14" @default.
• W2067138483 title "MBE Growth of GaAs_1-xSb_x and In_yGa_1-yAs and Application of BCF Theory to Study the Alloy Composition" @default.
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• W2067138483 doi "https://doi.org/10.1143/jjap.27.1585" @default.
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