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- W2067169898 abstract "A new method which can nondestructively measure the surface-state density (SSD) Ds and estimate the capture cross-sections (CCS) of surface state σ0n and σ−p on surface of p-type semiconductor crystals is proposed. This method is based on the photovoltage measurements at various temperatures. The photovoltage experiment was carried out with a (1 1 1) p-type Si single crystal (NA=4.8×1014 cm −3). Owing to that the surface barrier height φBP=0.6421 V and the surface-recombination velocity sn=9.6×103 cm s−1 of this sample can be determined, the SSDDs=1.2×1011 cm−2 eV−1 can therefore be obtained, furthermore CCS σ0n≈5×10−14 cm2 and σ−p≈2×10−10 cm2 can also be estimated. These results are consistent with that of related reports obtained by other methods." @default.
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- W2067169898 date "2000-12-01" @default.
- W2067169898 modified "2023-10-02" @default.
- W2067169898 title "Estimation for the capture cross-sections of surface state on p-Si surface by photovoltaic method" @default.
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- W2067169898 doi "https://doi.org/10.1016/s0038-1101(00)00188-x" @default.
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