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- W2067170150 abstract "The effects of radiation-induced interface-trapped charge and oxide-trapped charge on the inversion-layer hole mobility in p-channel double-diffused metal-oxide-semiconductor power transistors at 300 and 77 K are investigated. The mobility degradation is more pronounced at 77 K than at 300 K, due to increased importance of Coulomb scattering from trapped charge when phonon scattering is significantly reduced. The mobility degradation is primarily due to interface-trapped charge, but the effects of oxide-trapped charge must be taken into account in order to properly describe the mobility behavior, particularly at cryogenic temperatures." @default.
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- W2067170150 date "1993-03-15" @default.
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- W2067170150 title "Radiation-induced mobility degradation in <i>p</i>-channel double-diffused metal-oxide-semiconductor power transistors at 300 and 77 K" @default.
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- W2067170150 doi "https://doi.org/10.1063/1.353021" @default.
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