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• W2067211615 abstract "We report a simple technique for fabricating a layer of isolated Si quantum dots on SiO2 glass substrates. This technique uses conventional low-pressure chemical-vapor deposition for an extremely short deposition time in the early stage of poly-Si film growth. The layer after a deposition time of 60 s has isolated Si nanocrystals 5–20 nm in diameter and 2–10 nm in height. The measurements of optical absorption coefficient α show that the absorption edge for Si nanocrystals shifts to higher energies compared to that of bulk Si, indicating a widening of the energy gap caused by quantum size effects. The linear relationship (αhν)1/2 against hν suggests that the Si nanocrystal, whose diameter is as small as 10 nm, basically maintains the properties of an indirect band-gap semiconductor. Special attention must be paid to the Brownian migration of Si nanocrystals for fabricating Si quantum dots." @default.
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• W2067211615 date "1996-10-01" @default.
• W2067211615 modified "2023-09-23" @default.
• W2067211615 title "Microstructure and optical absorption properties of Si nanocrystals fabricated with low-pressure chemical-vapor deposition" @default.
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• W2067211615 doi "https://doi.org/10.1063/1.363359" @default.
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