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- W2067327839 abstract "Formation of SiGe/Si heterostructures by germanium ion implantation was investigated. A germanium-implanted layer was grown epitaxially in the solid phase by thermal annealing. Two kinds of crystalline defects were observed. One is a misfit dislocation, and the other is a residual dislocation caused by ion bombardment. The p-n junction formed in the SiGe layer has a leakage current three orders of magnitude larger than that of a pure Si p-n junction fabricated with an identical process except for the Ge+ implantation. Carbon doping in the SiGe layer improves its crystalline quality and the junction characteristics." @default.
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- W2067327839 date "1990-11-26" @default.
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- W2067327839 title "Characterization of SiGe/Si heterostructures formed by Ge<sup>+</sup>and C<sup>+</sup>implantation" @default.
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- W2067327839 doi "https://doi.org/10.1063/1.103888" @default.
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