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- W2067350010 abstract "Abstract Conventional low temperature techniques for deposition of silicon oxide on GaAs can encounter problems in achieving adherent films. We have deposited uniform, non-spalling and adherent silicon oxide films on polished GaAs substrates by photo-CVD using an ArF excimer laser (193 nm) in parallel configuration. The source gases were silane and nitrous oxide diluted in argon (purge gas). A study of the growth rate and refractive index, measured by ellipsometry, as well as FTIR spectroscopic analyses of the simultaneously deposited SiO x films on both GaAs and Si substrates is reported. Film properties on GaAs substrates are very similar to those obtained on silicon substrates. The flexibility of this LCVD approach has allowed the growth of silica films on both substrates with properties very close to those of thermal silicon oxide." @default.
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- W2067350010 date "1992-01-01" @default.
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- W2067350010 title "Excimer laser CVD of silicon oxide on GaAs: a comparison with deposition on c-Si" @default.
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- W2067350010 doi "https://doi.org/10.1016/0169-4332(92)90027-u" @default.
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