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- W2067396479 abstract "The aim of this work is to develop thin InP solar cells for space applications from more mechanically resistant, lighter, and cheaper substrates. In this paper we present the development of a p+/nn+ solar cell structure with a very thin emitter layer. A thin emitter helps to increase the collection of carriers generated by high energy incident photons from the solar spectrum. Moreover, the use of a p+/nn+ structure should improve the radiation resistance of this already radiation resistant technology. A remarkable improvement of high energy photo-response is shown for these CBE-grown very thin emitter InP solar cells. The ability to obtain a very high p-type InP doping level by using CBE avoided the sheet resistance increase that degrades the I–V characteristic even for emitters only 400 Å thick. It is also shown that the photo-response of thin base layers is reduced, and that more than 2.4 μm thick base layers are necessary for a better collection of near InP band gap photons." @default.
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- W2067396479 date "1998-06-01" @default.
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- W2067396479 title "Chemical beam epitaxy for high-efficiency InP solar cells" @default.
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- W2067396479 doi "https://doi.org/10.1016/s0022-0248(98)00080-3" @default.
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