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• W2067396989 abstract "In this work, the conventional via-first dual damascene (DD) patterning scheme is replaced by a cost-efficientMulti-Level Multiple Exposure (MLME) patterning and etching approach. A two-layer positive-tone photoresist stack issequentially imaged using 193 nm dry lithography, to produce a DD resist structure that is subsequently transferred intoan auxiliary dual organic underlayer stack, and then further into a dielectric layer. This novel integration approacheliminates inter-tool wafer exchange sequences as performed in a conventional litho-etch-litho-etch process flow, whilesimultaneously being applicable to all back-end-of-the-line (BEOL) levels, ensuring throughput increase. The top andbottom resist layers are chemically designed in such a way that they feature differential solubility in organic solventsmaking it possible to coat the top photoresist onto the bottom resist layer without intermixing to enable a strict litholitho-etch processing sequence. Independent registration of the via and trench structures in the bottom and top resistlayers is achieved by selective photospeed decoupling of the respective layers, so that the bottom resist is largelyinsensitive at nominal resist exposure dose for the top resist. Imaging performance evaluation of the newly introducedMLME technology includes the resist materials selection process and their required properties (solvent compatibility,adhesion, photospeed, defectivity and correction of via dose bias due to trench exposure) as well as metrology work.Image transfer of the patterned DD resist structure into an underlying transfer layer stack and then further into adielectric layer using Reactive Ion Etching (RIE) followed by electroplating, polishing and electrical testing was alsothoroughly investigated and is described in detail in an accompanying paper." @default.
• W2067396989 created "2016-06-24" @default.
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• W2067396989 date "2010-03-11" @default.
• W2067396989 modified "2023-09-23" @default.
• W2067396989 title "Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 1: lithographic patterning" @default.
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• W2067396989 doi "https://doi.org/10.1117/12.846443" @default.
• W2067396989 hasPublicationYear "2010" @default.
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