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- W2067616590 abstract "By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images." @default.
- W2067616590 created "2016-06-24" @default.
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- W2067616590 date "2015-02-01" @default.
- W2067616590 modified "2023-10-16" @default.
- W2067616590 title "Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique" @default.
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- W2067616590 doi "https://doi.org/10.1016/j.orgel.2014.11.028" @default.
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