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- W2067627503 abstract "Abstract A proximity-effect correction method for VLSI patterns has been developed. In this method, a dose ratio has been introduced as a control parameter for the negative- resist thickness after development, in addition to the proximity parameters. A new technique has been used to obtain the proximity parameters. By using the dose ratio and the proximity parameters, both the exposure dose and the size of the irradiated shape are easily determined. A pattern accuracy of ±0.1 μm and a uniform resist of the desired thickness were obtained. The computation time is proportional to 1.2 power of pattern density, and is 100 seconds on a 1.5-MIPS computer when correcting for 10 4 shapes in a pattern whose pattern density is 10 4 ." @default.
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- W2067627503 date "1984-12-01" @default.
- W2067627503 modified "2023-09-27" @default.
- W2067627503 title "Proximity-effect correction for VLSI patterns in electron-beam lithography" @default.
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- W2067627503 doi "https://doi.org/10.1016/0167-9317(84)90004-2" @default.
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