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- W2067683668 abstract "We have investigated the structure of amorphous Ge films with 10-keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion-implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network." @default.
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- W2067683668 date "1978-04-15" @default.
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- W2067683668 title "Effects of ion implantation on the structure of amorphous germanium" @default.
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- W2067683668 doi "https://doi.org/10.1063/1.90110" @default.
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