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- W2067721163 abstract "Thin epitaxial films of SnTe were deposited on mica and were exposed to molecular hydrogen for different durations at various pressures up to 700 psi. The films exposed to hydrogen for less than 2 h at a pressure of less than 100 psi, regained their initial conductivity value within 48 h. The time period of this desorption process was dependent on the exposure parameters. The films exposed to hydrogen for more than 2 h at a pressure of more than 200 psi were stable for a period of more than 30 days, indicating that the adsorbed hydrogen had indiffused into the films. The Hall coefficient and DC conductivity measurements are reported on the films in which the ageing effect was negligible. Inspecting the films at different pressures indicates that the conductivity first decreased with increasing pressure, thereby reaching a minimum, and then started to increase. The value of the Hall coefficient, on the other hand, become more positive with increasing pressure, thereby reaching a maximum, then started to decrease, and finally changed sign to negative for high pressures. The results have been explained on the basis of a donor action of the hydrogen gas." @default.
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- W2067721163 date "1982-07-01" @default.
- W2067721163 modified "2023-09-27" @default.
- W2067721163 title "Electrical effects of hydrogen on SnTe thin films" @default.
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- W2067721163 doi "https://doi.org/10.1016/0378-5963(82)90104-0" @default.
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