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- W2067725086 abstract "Chromium carbonitride coatings with a low nitrogen content were deposited by low pressure MOCVD in the temperature range 573–793 K using Cr(NEt2)4 as single-source precursor. As-deposited films are amorphous and crystallize upon annealing at 873 K to form an orthorhombic ternary phase. They exhibit a high hardness and their resistivity decreases by increasing the growth temperature. This dependence has been correlated to their microstructure. Quantitative 1H NMR analysis of the by-products of the MOCVD reaction has been performed. The quasi-equimolecular ratio of the by-products EtN=CHMe and HNEt2 suggests that most of the NEt2 ligands are removed by a stepwise mechanism, which is discussed." @default.
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- W2067725086 date "1997-06-01" @default.
- W2067725086 modified "2023-09-27" @default.
- W2067725086 title "MOCVD Route to Chromium Carbonitride Thin Films Using Cr(NEt2)4 as Single-Source Precursor: Growth and Mechanism" @default.
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- W2067725086 doi "https://doi.org/10.1002/cvde.19970030305" @default.
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