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- W2067870748 abstract "Al2O3 and AlPxOy dielectric layers have been deposited on n-type InP substrates and the electrical properties of the interfaces have been evaluated by current-voltage and capacitance-voltage (C-V) measurements on metal- insulator-semiconductor diodes. Layers were deposited by combining trimethyl- aluminum, oxygen and phosphine in a low pressure chemical vapor deposition reactor in which the oxygen was excited in an r.f. plasma prior to mixing with the reactive gases in the deposition zone. The Al2O3 layers were invariably too conductive for meaningful C-V measurements; however, the AlPxOy layers not only were of high resistivity (ϱ > 1016 Ω cm) but also exhibited interfacial properties superior to those of SiO2 layers on InP. The surface potential could be modulated over the full band gap of InP since the surface density was less than 1011 cm-2 eV-1 over much of the band gap." @default.
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- W2067870748 date "1984-03-01" @default.
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- W2067870748 title "Electrical properties of Al2O3 and AlPxOy dielectric layers on InP" @default.
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- W2067870748 doi "https://doi.org/10.1016/0040-6090(84)90017-8" @default.
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