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- W2067912471 abstract "A series of LaB6/ATO films were deposited by magnetron sputtering at room temperature with the same deposition parameters. After deposition, the films were annealed at 400 °C, 700 °C and 1000 °C, respectively. The structure, morphology and opto-electrical characteristics of films were studied. It was found that the temperature for primary nucleation of LaB6 films was about 700 °C. The crystallinity and transmissivity increased with increasing annealing temperature. After annealing at 1000 °C, the films exhibited a much higher transmissivity in the visible region than in the near-infrared area. However, the resistivity increased by one order of magnitude after heat treatment and the films without annealing presented the best electrical property." @default.
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- W2067912471 date "2012-07-01" @default.
- W2067912471 modified "2023-09-27" @default.
- W2067912471 title "Annealing effects on properties of LaB6/ATO thin films deposited by magnetron sputtering" @default.
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- W2067912471 doi "https://doi.org/10.1016/j.ceramint.2012.02.012" @default.
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