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- W2067915072 startingPage "4014" @default.
- W2067915072 abstract "Due to charged-impurity scattering and surface-roughness scattering, anomalies are found in the conductivity of Si(100) metal-oxide-semiconductor systems. We propose a theory to explain the peak structure found in mobility measurements and the depletion-field anomalies in the dynamical conductivity. The plasmon-mass minimum found in experiments is shown to be the result of the two scattering mechanisms. The mass increase at low density is due to reactive effects, but the mass increase at high density is due to dissipative effects. The increase and decrease of the cyclotron mass is explained by interaction effects and localization precursors, respectively, and is in good quantitative agreement with the experiment. Some comments are made for the cyclotron resonance in a frequency sweep. In the insulator phase a sharp resonance with variable cyclotron mass broadened by temperature effects is predicted." @default.
- W2067915072 created "2016-06-24" @default.
- W2067915072 creator A5054801786 @default.
- W2067915072 date "1985-09-15" @default.
- W2067915072 modified "2023-10-18" @default.
- W2067915072 title "Conductivity, plasmon, and cyclotron-resonance anomalies in Si(100) metal-oxide-semiconductor systems" @default.
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- W2067915072 doi "https://doi.org/10.1103/physrevb.32.4014" @default.
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