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- W2067930108 abstract "We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiOx. It is seen that material with a grain size of 0.6–0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950 °C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities." @default.
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- W2067930108 date "1987-08-15" @default.
- W2067930108 modified "2023-10-16" @default.
- W2067930108 title "Growth of GaAs on SiO<i>x</i> by molecular-beam epitaxy" @default.
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- W2067930108 doi "https://doi.org/10.1063/1.339855" @default.
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