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• W2068001396 abstract "Phase Change Memory (PCM) is emerging as a high-dense and power-efficient choice for future main memory systems. While PCM cell size is marching towards minimum achievable feature size, recent prototypes effectively improve device scalability by storing multiple bits per each cell. Unfortunately, Multi-Level Cell (MLC) PCM devices offer higher access time and energy when compared to Single-Level Cell (SLC) counterparts making it difficult to incorporate MLC in main memory. To address this challenge, we proposes Zero-value-based Morphable PCM, ZM-PCM for short, a novel MLC-PCM main memory architecture which tries incorporating benefits of both MLC and SLC devices within the same structure. ZM-PCM relies on the observation that zero value at various granularities is frequently occurred within main memory transactions when running PARSEC-2 programs. Motivated by this observation, ZM-PCM codes redundant zero MLC cells into limited bits that is storable in the SLC (or alternatively in devices with fewer bits) form with improved latency, energy, and lifetime with no reduction in available main memory capacity. We evaluate microarchitecture design of morphable PCM cell, coding and decoding algorithms and details of related circuits. We also introduce a simple area-efficient caching mechanism for fast cost-efficient access to coding metadata. Our evaluation on a quad-core CMP with 4GB 8-bit MLC PCM main memory shows that ZM-PCM morphs up to 93% (and 50% on average) of all memory cells with lower densities which directly turns in performance, power and lifetime enhancement." @default.
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• W2068001396 date "2011-10-01" @default.
• W2068001396 modified "2023-10-14" @default.
• W2068001396 title "A morphable phase change memory architecture considering frequent zero values" @default.
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• W2068001396 doi "https://doi.org/10.1109/iccd.2011.6081426" @default.
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