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- W2068004687 abstract "In this study, the electrical properties of as-deposited Sr 0.4 Ba 0.6 Nb 2 O 6 (SBN) ferroelectric thin films on SiO 2 /Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited SBN ferroelectric thin films were treated by SCF process which mixed with pure H 2 O and propyl alcohol. After SCF process treatment, the memory windows increased in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were obtained. In addition, the improvement properties of as-deposited SBN thin films after SCF process treatment were found by XPS, C-V, and J-E measurement. Finally, the mechanism concerning the dependence of electrical properties of the SBN ferroelectric thin films on the SCF process was discussed." @default.
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- W2068004687 date "2011-05-01" @default.
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- W2068004687 title "Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices" @default.
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- W2068004687 doi "https://doi.org/10.4028/www.scientific.net/amr.239-242.2628" @default.
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