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- W2068078413 abstract "The CuInSe2 and Cu(In1-xGax)Se2 absorbing layer films are prepared by selenization after magnetron sputtering. The influence of selenization parameters, including selenized temperature and time, on microstructure of CuInSe2 thin films was studied by X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS). Highly crystallized CuInSe2 film could be obtained when selenized at 500°C for 40 min. By using the same selenization technique, high-quality Cu(In1-xGax)Se2 films were also successfully synthesized from two types of CuInGa precursor layers with different structure." @default.
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- W2068078413 date "2013-01-01" @default.
- W2068078413 modified "2023-09-28" @default.
- W2068078413 title "Synthesis of Absorber Layer Film for CI(G)S Solar Cells by Selenization after Sputtering" @default.
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- W2068078413 doi "https://doi.org/10.1080/10584587.2013.789321" @default.
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