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- W2068217728 abstract "Hydrogen-free Diamond-like Carbon(DLC) films onto silicon wafer are deposited by pulsed laser deposition(PLD) at asubstrate temperature of 25 °C in vacuum. The laser source used was an 20 ns KrF excimer laser beam with thewavelength of 248 nm and maximum laser energy of 600 mJ at a repetition rate of 10Hz. The laser intensity used varyfrom 1.02×109W/cm 2 to 2.24×109W/cm 2 . Infrared transittance, Raman spectroscopy and nano-hardness are used toanalyze the comprehensive performance of the films, and the results show that the film deposited at laser intensity of1.28×109W/cm 2 is the best among other films. This can be explained well by that the carbon ion energy at laser intensityof 1.28×109W/cm 2 is suitable to form sp 3 bonds than sp 2 bonds. If carbon ion energy is too low, it has not enough energyto from sp 3 bonds. While, if carbon ion energy is too high, extra energy will transfer sp 3 bonds to sp 2 bonds. Ramanspectrum measurement showed a unsymmetrical broad peak with a center at 1550 cm -1 for all films. The ID/IG calculatedby Gaussian fit of Raman spectrum is as low as 0.44. There are few graphite particles on these DLC films. Thenano-hardness of DLC films is relatively high. The DLC films improve Silicon wafers' anti-scratch performanceefficiently. The DLC films are scratched 100000 times under 9.8N press on RS-5600 films scratch machine, no nick isobserved after scratch. The highest IR transmittance between 3 and 5μm of Silicon wafers increase 22%, from 54.5% to66.5% after coated by DLC films, which approaches the highest IR transmittance in theory. The mean IR transmittancebetween 3 and 5μm of the Diamond-like Carbon films deposited at laser intensity of 1.28×109W/cm 2 is 65.6%." @default.
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- W2068217728 date "2009-07-03" @default.
- W2068217728 modified "2023-09-23" @default.
- W2068217728 title "Excimer pulsed laser deposition of diamond-like carbon films" @default.
- W2068217728 doi "https://doi.org/10.1117/12.835223" @default.
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