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• W2068259642 abstract "Hot carrier effects in Si-MOSFETs cause serious reliability problems in VLSI circuits. While most of them have been investigated empirically, it is also important to clarify the microscopic degradation mechanism. In addition, there are other effects which can affect the device characteristics significantly and can be used to study hot carrier transport in MOSFETs. In this paper, several experimental studies associated with hot carrier effects in MOSFETs are reviewed. In particularly, hot electron energy effects are discussed, such as velocity overshoot and photo-emission in MOSFETs, and technological efforts to overcome the degradation problem in actual devices are reviewed briefly." @default.
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• W2068259642 date "1989-12-01" @default.
• W2068259642 modified "2023-10-01" @default.
• W2068259642 title "Experimental study of hot carriers in small size Si-MOSFETs" @default.
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• W2068259642 doi "https://doi.org/10.1016/0038-1101(89)90267-0" @default.
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