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- W2068276858 abstract "Transmission electron microscopy was employed to evaluate the microstructure of Al/Ti ohmic contacts to AlGaN/GaN heterostructure field-effect transistor structures. Contact resistance was found to depend on the structure and composition of the metal and AlGaN layers, and on atomic structure of the interface. A 15–25-nm-thick interfacial AlTi2N layer was observed at the contact-AlGaN interface. Formation of such nitrogen-containing layers appears to be essential for ohmic behavior on n-type III-nitride materials suggesting a tunneling contact mechanism. Contact resistivity was found to increase with Al fraction in the AlGaN layer." @default.
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- W2068276858 date "1998-11-02" @default.
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- W2068276858 title "Microstructure of Ti/Al ohmic contacts for n-AlGaN" @default.
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