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- W2068277923 abstract "The dependences of source resistance, Rs, transconductance, gm, gate capacitance, Cgs, Cgd, and cutoff frequency, fT, of InP-based HEMTs on an InAlAs barrier layer thickness, d, were investigated. We divided Rs into 4 elements and analyzed the effect of thinning a barrier layer. The resistance originated from the large band discontinuity between InAlAs and InGaAs decreased by thinning a barrier layer, while the resistance in the gate-recessed region increased. As a result, InP-based HEMT with d=10 nm showed lowest Rs. On the other hand, gm increased monotonically with d, due to the reduction of the gate to channel distance, and gmint reached to 2.6 S/mm at d=5 nm. We also estimated fT by using small-signal measurements. fT increased with the reduction of d, which results in the improvement in noise characteristics." @default.
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- W2068277923 date "2008-01-01" @default.
- W2068277923 modified "2023-10-18" @default.
- W2068277923 title "Improvement in Device Performances of InP-Based HEMTs by Thinning a Barrier Layer" @default.
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- W2068277923 doi "https://doi.org/10.1541/ieejeiss.128.861" @default.
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