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- W2068286208 abstract "One of the problems in Si molecular beam epitaxy regrowth for device application is that the cleaning conducted prior to regrowth results in unintentional etching of the Si layer grown in the preceding process. In this study, a SiGe epitaxial layer was successfully applied as a protective coating before RCA cleaning, and a one-order-lower defect density was obtained using the SiGe protective layer without any etching of the Si underlayer. The SiGe layer was completely removed by RCA solution and no Ge was detected in the regrowth layer by Auger electron spectroscopy." @default.
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- W2068286208 date "1990-09-01" @default.
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- W2068286208 title "SiGe Passivation for Si MBE Regrowth" @default.
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- W2068286208 doi "https://doi.org/10.1143/jjap.29.l1702" @default.
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