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- W2068344054 abstract "The achievement of a depth of focus required for stable process conditions is one of the biggest challenges inmodern optical photolithography. There are several ways of improving the depth of focus. For line/spacelayers, for instance, application of RET (Resolution Enhancement Technology) using scattering bars, phaseshiftmasks or optimized illumination systems have shown good results. For contact and via layers the depthof focus is limited and critical, due to the structure size of the holes, alternating pattern density and wafertopology. A well known method of improving the depth of focus for contact and via layers is called focuslatitude enhancement exposure (FLEX) [1-3]. With FLEX, several focal planes are being exposed, i.e. eachduring a separate exposure step. The main drawback is low throughput, as the total processing time riseswhich each additional exposure.In this paper, we investigate Nikon's CDP (continuous depth of focus expansion procedure) [4]. The CDPoption is applicable to modern scanning exposure tools [4-5]. A schematic view of the procedure is shown inFig. 1. The CDP value or CDP amplitude defines the tilt of the wafer and thus the range of focus in the resist,as the focus plane migrates through the resist during the exposure. The main advantage of CDP, comparedto FLEX, is higher throughput, since focal planes are defined within a single exposure. A non-CDP exposuremay result in varying aerial images within resist thickness, therefore leading to decreased image contrastwithin out-of-focus planes. As shown in Fig. 1 the averaged aerial images of a CDP exposure induce betterimage contrast throughout the resist layer and therefore increase the focus window." @default.
- W2068344054 created "2016-06-24" @default.
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- W2068344054 date "2009-01-29" @default.
- W2068344054 modified "2023-09-23" @default.
- W2068344054 title "CDP: application of focus drilling" @default.
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- W2068344054 doi "https://doi.org/10.1117/12.835204" @default.
- W2068344054 hasPublicationYear "2009" @default.
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