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- W2068365871 abstract "Random Telegraph Noise (RTN) and low frequency noise (LFN) properties were investigated for the first time in sub-100 nm 3-D stacked NAND flash memory with tube-type poly-Si channel structure. The 3-D stacked NAND flash memory showed higher noise power density of bit-line (BL) current (I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BL</sub> ) by ~10 times than 32 nm planar NAND flash memory. The behavior of ΔI <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BL</sub> was investigated with control-gate bias (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CG</sub> ), BL bias (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BL</sub> ) and pass bias (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>pass</sub> ). As temperature (T) increases, capture and emission times becomes short. To understand poly-Si channel, planar poly-Si thin film transistors (TFT) with different grain size were prepared and analyzed in terms of noise, subthreshold swing (SS), and T." @default.
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- W2068365871 date "2012-06-01" @default.
- W2068365871 modified "2023-10-16" @default.
- W2068365871 title "Analysis of Random Telegraph Noise and low frequency noise properties in 3-d stacked NAND flash memory with tube-type poly-Si channel structure" @default.
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- W2068365871 doi "https://doi.org/10.1109/vlsit.2012.6242458" @default.
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