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• W2068366932 abstract "Abstract Stress evolution during MOCVD growth of AlN buffer layers and GaN epilayers on (1 1 1) Si substrates was investigated using in situ wafer curvature measurements in order to understand the impact of growth conditions on thin film stress. AlN layers up to 400 nm thick were deposited over a temperature range of 600–1100°C at growth rates of 0.1–1 nm/s. In all cases, the growth stresses were tensile and the stress value did not change during growth. A sharp drop in the value of the tensile growth stress is observed between 900°C and 800°C from >1 GPa to" @default.
• W2068366932 created "2016-06-24" @default.
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• W2068366932 date "2004-01-01" @default.
• W2068366932 modified "2023-09-24" @default.
• W2068366932 title "In situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates" @default.
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• W2068366932 doi "https://doi.org/10.1016/j.jcrysgro.2003.11.020" @default.
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