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• W2068367850 abstract "► 300°C annealing causes the O and S bonded to Sb to transfer to Ga ► 300°C annealing causes leaves the top 5-6 nm of the substrate Sb rich ► TMA reduces the sulfur detected ► Sb-Sb, Sb-O and Sb-S bonds are not detected after annealing or ALD ► Ga-O and Ga-S remain detectable after annealing and ALD GaSb(0 0 1) was treated with (NH 4 ) 2 S x and the evolution of the interfacial chemistry was investigated, in situ , with monochromatic X-ray photoelectron spectroscopy (XPS), following heat treatment and exposure to trimethylaluminum (TMA) and deionized water (DIW) in an atomic layer deposition reactor. Elemental Sb (Sb–Sb bonding) as well as Sb 3+ and Sb 5+ chemical states were initially observed at the native oxide/GaSb interface, yet these diminished below the XPS detection limit after heating to 300 °C. No evidence of Ga–Ga bonding was observed whereas the Ga 1+ /Ga–S chemical state was robust and persisted after heat treatment and exposure to TMA/DIW at 300 °C." @default.
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• W2068367850 date "2011-08-01" @default.
• W2068367850 modified "2023-10-13" @default.
• W2068367850 title "In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution" @default.
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• W2068367850 doi "https://doi.org/10.1016/j.apsusc.2011.05.034" @default.
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