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- W2068477148 abstract "The initial stages of ultrathin epitaxial CoSi2 formation on Si(111) and Si(100) surfaces were studied by core-level photoelectron spectroscopy with synchrotron radiation. A high surface sensitivity was obtained for electrons with kinetic energy of ~ 30 eV, where the mean free path is estimated to be less than 2.5 Å. Our Si 2p data show that on Si(111) a part of the Co atoms are in a CoSi2-like environment at room temperature, the rest forms a Co-Si solid solution. For a complete reaction, annealing to ~ 350°C is needed. In this way we obtain the Co-rich CoSi2(111)-C surface termination free of pinholes which is stable up to at least 460°C. After annealing to ~550°C the Si-rich CoSi2(111)-S surface termination containing some pinholes appears. Contrary to the Si(111), Co deposition on Si(100) surface at room temperature does not lead to CoSi2 but only to a Co-Si solid solution. For coverages below 2.6 ML heating to ~ 460°C is necessary to obtain CoSi2, whereas for higher coverages heating to ~300°C is sufficient. This effect is attributed to a change of the Co diffusion mechanism at room temperature. The CoSi2 films on the Si(100) surface produced in this way always contain pinholes." @default.
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- W2068477148 date "1994-04-01" @default.
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- W2068477148 title "Reaction of ultrathin Co layers with Si(111) and Si(100) surfaces" @default.
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- W2068477148 doi "https://doi.org/10.1016/0039-6028(94)90405-7" @default.
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