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- W2068496656 abstract "Low-temperature wafer bonding using sub-micron gold particles was investigated. Wafer-level pattern transfer method has also been developed to enable patterning on wafers with fragile structures such as MEMS devices. Sub-micron Au particle patterns with a width of 20 µm – 60 µm and a height around 20 µm were formed on 100mm-diameter glass wafers by means of wafer-level processing using photolithography and a slurry-filling technique, and then successfully transferred onto Si wafers in ambient atmosphere at a temperature of 150°C and an applied pressure of 20 MPa – 30 MPa. Wafer bonding was performed at 200°C, 100 MPa and exhibited a sufficient tensile strength of 45.8 MPa. A good hermeticity was also confirmed as He leak rate of < 1 × 10−9 Pa·m3/s. Compression deformation measurement was performed for patterns with different mean particle sizes of 0.3µm and 0.1µm and the performance on a-few-µm surface roughness absorption was demonstrated. Patterns with smaller size particles showed larger deformation, or more ability to absorb surface opography." @default.
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- W2068496656 date "2012-10-01" @default.
- W2068496656 modified "2023-09-28" @default.
- W2068496656 title "Bonding properties of low-temperature wafer bonding using sub-micron gold particles with different particle sizes" @default.
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- W2068496656 doi "https://doi.org/10.1109/impact.2012.6420217" @default.
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