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• W2068504893 startingPage "2689" @default.
• W2068504893 abstract "We report on the fabrication of pentacene thin-film transistors (TFTs) with Al2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass by rf magnetron sputtering at room temperature. Although the Al2O3+x was expected to show lower capacitance and breakdown field than stoichiometric Al2O3, our pentacene TFTs with optimized thin Al2O3+x gate dielectric exhibited a moderately high field mobility of 0.14 cm2/V s, an outstanding subthreshold slope of 0.88 V/dec, and an on/off ratio over 106. Our work demonstrates that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs." @default.
• W2068504893 created "2016-06-24" @default.
• W2068504893 creator A5026332374 @default.
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• W2068504893 date "2003-09-29" @default.
• W2068504893 modified "2023-10-14" @default.
• W2068504893 title "Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass" @default.
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• W2068504893 doi "https://doi.org/10.1063/1.1613997" @default.
• W2068504893 hasPublicationYear "2003" @default.
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