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• W2068573630 endingPage "1957" @default.
• W2068573630 startingPage "1948" @default.
• W2068573630 abstract "We cleaved a boron (B) heavily implanted Si wafer, and observed its (111) cross section using a scanning tunneling microscope (STM). After annealing, the characteristic $(sqrt{3}ifmmodetimeselsetexttimesfi{}sqrt{3})R30ifmmode^circelsetextdegreefi{}$ reconstruction of the B-rich Si(111) surface appeared at the edge where the implanted B accumulated. The $7ifmmodetimeselsetexttimesfi{}7$ reconstruction was observed in the middle of the cleaved surface where the implanted B was absent. Between the $7ifmmodetimeselsetexttimesfi{}7$ and the $sqrt{3}ifmmodetimeselsetexttimesfi{}sqrt{3}$ reconstructions, a transient region with a disordered phase was observed. The disordered phase nucleated just under the step edge, and connected to the $7ifmmodetimeselsetexttimesfi{}7$ domain in the middle of the lower terrace. The boundary between the disordered phase and the $7ifmmodetimeselsetexttimesfi{}7$ domain was straight along the $[1ifmmodebarelsetextasciimacronfi{}10]$ direction and was terminated by faulted halves of the dimer-adatom-stacking fault (DAS) $7ifmmodetimeselsetexttimesfi{}7$ unit cell. At the boundary, adatoms in the disordered phase are arranged to construct the corner hole of the DAS structure. However, they do not introduce a stacking fault into the disordered phase. In the disordered phase, $sqrt{3}ifmmodetimeselsetexttimesfi{}sqrt{3}$ domains existed locally, and were separated by out-of-phase boundaries with $c(2ifmmodetimeselsetexttimesfi{}4)$ and/or $2ifmmodetimeselsetexttimesfi{}2$ local atomic arrangements in relation to each other. By the sample bias voltage dependence of the STM image, we found that all the $c(2ifmmodetimeselsetexttimesfi{}4)$ and the $2ifmmodetimeselsetexttimesfi{}2$ local atomic arrangements are due to the Si adatom at $T4$ site on the subsurface Si atom, whereas the $sqrt{3}ifmmodetimeselsetexttimesfi{}sqrt{3}$ domains are due to the B atom at $S5$ subsurface site under the Si adatom. At the transient region where the B coverage is less than the saturation value to complete the B-induced $sqrt{3}ifmmodetimeselsetexttimesfi{}sqrt{3}$ reconstruction, the condensation of the B atom into $sqrt{3}ifmmodetimeselsetexttimesfi{}sqrt{3}$ local domains results in the B-deficient region with the $c(2ifmmodetimeselsetexttimesfi{}4)$ and $2ifmmodetimeselsetexttimesfi{}2$ local adatom arrangement between $sqrt{3}ifmmodetimeselsetexttimesfi{}sqrt{3}$ local domains. With respect to the local surface energy, the B-rich and the B-deficient surface favors the $sqrt{3}ifmmodetimeselsetexttimesfi{}sqrt{3}$ and the $2ifmmodetimeselsetexttimesfi{}2$ and/or $c(2ifmmodetimeselsetexttimesfi{}4)$ adatom arrangement, respectively. The coexistence of these local domains causes the disordered phase." @default.
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• W2068573630 date "1997-07-15" @default.
• W2068573630 modified "2023-09-24" @default.
• W2068573630 title "Cross-sectional scanning tunneling microscope study of a boron-implanted Si wafer" @default.
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• W2068573630 doi "https://doi.org/10.1103/physrevb.56.1948" @default.
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