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- W2068615432 abstract "This paper presents the results of a study of the effects of oxygen and nitrogen incorporation in Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> As epitaxial layers during MBE growth. Low level controlled air leaks were introduced during growth and the structural properties of the layers measured by HRXRD, while SIMS was used to measure the oxygen and nitrogen content in the layers. The Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> As lattice parameter exhibits contraction for Al fractions x up to 0.6 while layers with x fractions greater than 0.6 show an expansion in the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> As lattice parameter. The observations are interpreted by comparing these lattice parameter measurements with Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> As layers grown without admitting air to the growth chamber. The x-fraction incorporation dependence, as well as the lattice parameter behavior, is accounted for by a model which discriminates between the propensities for O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> to incorporate at As sites by bonding to pairs of Ga atoms in the layer beneath, to one Al and one Ga in the layer beneath or to two Al atoms in the layer beneath. There is also evidence that the O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> molecules compete for these bonding sites." @default.
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- W2068615432 date "2012-10-01" @default.
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- W2068615432 title "The impact of oxygen incorporation during the MBE growth of AlGaAs" @default.
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