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- W2068689377 abstract "In this study, the characteristics of both p-type and n-type Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> insulating layer and a hydrogen (H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> insulating layer can be greatly enhanced by depositing a SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> passivation layer on top. It suggests that a sputtering SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> insulating layer is a good alternative insulating layer for MIS solar cells." @default.
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- W2068689377 date "2010-06-01" @default.
- W2068689377 modified "2023-09-27" @default.
- W2068689377 title "Characteristics of MIS solar cells using sputtering SiO<inf>2</inf> insulating layers" @default.
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- W2068689377 doi "https://doi.org/10.1109/pvsc.2010.5614304" @default.
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