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• W2068695934 abstract "Abstract Transparent conductive gallium‐doped zinc oxide (Ga‐doped ZnO) films were prepared on glass substrate by magnetron sputtering. The influence of substrate temperature on structural, optoelectrical and surface properties of the films were investigated by X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), spectrophotometer, four‐point probe and goniometry, respectively. Experimental results show that all the films are found to be oriented along the c ‐axis. The grain size and optical transmittance of the films increase with increasing substrate temperature. The average transmittance in the visible wavelength range is above 83% for all the samples. It is observed that the optoelectrical property is correlated with the film structure. The Ga‐doped ZnO film grown at the substrate temperature of 400 °C has the highest figure of merit of 1.25 × 10 −2 Ω −1 , the lowest resistivity of 1.56 × 10 −3 Ω·cm and the highest surface energy of 32.3 mJ/m 2 ." @default.
• W2068695934 created "2016-06-24" @default.
• W2068695934 creator A5036872947 @default.
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• W2068695934 date "2012-07-03" @default.
• W2068695934 modified "2023-10-10" @default.
• W2068695934 title "Structural and optoelectrical properties of Ga-doped ZnO semiconductor thin films grown by magnetron sputtering" @default.
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• W2068695934 doi "https://doi.org/10.1002/crat.201100576" @default.
• W2068695934 hasPublicationYear "2012" @default.
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