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- W2068751425 abstract "Excitonic properties of high-quality ZnS layers grown by low-pressure metal-organic vapor-phase epitaxy have been investigated using photoluminescence and absorption spectroscopy. Comparison with theoretical models has provided accurate information on eigenstates, broadening, strain, and temperature dependence of heavy-hole, light-hole, and split-off-band exciton transitions. Finally, radiative recombination due to inelastic exciton-polariton scattering is shown under strong injection rates." @default.
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- W2068751425 date "1997-03-15" @default.
- W2068751425 modified "2023-10-16" @default.
- W2068751425 title "Optical properties of MOVPE-grown ZnS epilayers on (100) GaAs" @default.
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- W2068751425 doi "https://doi.org/10.1103/physrevb.55.7660" @default.
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