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- W2068756782 abstract "A suitable pre-treatment process to significantly suppress growth hillocks on homoepitaxial diamond surfaces has been successfully developed. Nanometer-scale morphologies obtained for the homoepitaxial diamond films by means of an atomic force microscope show that the mean roughness (root mean square) of the homoepitaxial diamond films with thickness of 1 μm was approximately 5 nm in the scanning region of 2×2 μm2. The results from cathodoluminescence (CL) measurements indicate that the developed pre-treatment and deposition by a high power ASTeX microwave plasma chemical vapor deposition (MWP-CVD) apparatus led to growth of homoepitaxial diamond films with high crystalline quality yielding only band-edge emissions as the main peak in CL spectra at low temperatures (80 K)." @default.
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- W2068756782 date "2000-09-01" @default.
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- W2068756782 title "Growth and characterization of hillock-free high quality homoepitaxial diamond films" @default.
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- W2068756782 doi "https://doi.org/10.1016/s0925-9635(00)00295-8" @default.
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