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• W2068791323 abstract "The increase in the forward gain of a lateral p-n-p device under forward-bias stress conditions is discussed. The phenomenon has been characterized as a function of collector-base voltage, emitter current, and stress temperature. The results are interpreted as electron trapping at the interface between the passivation oxide and a silicon nitride overlayer. The trapping behavior is further modified by the finite conductivity of the silicon nitride. A quasi-empirical model for the effect incorporating the hot-electron injection and the nitride conduction has been developed. >" @default.
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• W2068791323 date "1990-03-01" @default.
• W2068791323 modified "2023-09-23" @default.
• W2068791323 title "Electron trapping, nitride conduction, and forward gain instability in a lateral p-n-p device" @default.
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• W2068791323 doi "https://doi.org/10.1109/16.47782" @default.
• W2068791323 hasPublicationYear "1990" @default.
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