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• W2068795280 abstract "In this article, we explore the mechanisms involved in the change in magnetoresistance (MR) as a pseudo spin valve (PSV) of the form NiFe(15nm)∕Cu(2.2nm)∕NiFe(6nm) is patterned into a nanowire array. We have used in situ measurements to investigate the change in the performance of the PSV for different milling depths and wire widths. Micromagnetic simulations have been used in combination with the experimental data to help interpret the results. As the milling depth increases the giant magnetoresistance (GMR) increases, due to an increase in the antiparallel alignment between the two ferromagnetic layers. The increase in GMR is accompanied by a large increase in the reversal field of the thicker layer, while the thinner layer reversal field remains approximately the same throughout the milling. A maximum GMR is observed when the structure is fully milled into a nanowire array. Closure domains at the ends of the wires dominate the reversal process." @default.
• W2068795280 created "2016-06-24" @default.
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• W2068795280 date "2005-02-09" @default.
• W2068795280 modified "2023-10-16" @default.
• W2068795280 title "<i>In situ</i>magnetoresistance measurements during nanopatterning of pseudo-spin-valve structures" @default.
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• W2068795280 doi "https://doi.org/10.1063/1.1852067" @default.
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