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- W2068808434 abstract "고효율, 저가격의 태양전지를 위해 습식공정 중 하나인 Ni-P 무전해 도금을 이용한 실리콘 태양전지 웨이퍼를 열처리에 따른 4점굽힘시험을 통해 정량적인 계면 접착에너지를 평가하였다. 실험 결과 실리콘 태양전지 웨이퍼와 Ni-P 박막 사이의 계면접착에너지는 <TEX>$14.83{pm}0.76J/m^2$</TEX>이며, 후속 열처리에 따른 실리콘 태양전지 웨이퍼와 Ni-P 무전해 도금은 <TEX>$300^{circ}C$</TEX> 처리 시 <TEX>$12.33{pm}1.16J/m^2$</TEX>, <TEX>$600^{circ}C$</TEX> 처리 시 <TEX>$10.83{pm}0.42J/m^2$</TEX>로써 전반적으로 높은 계면접착에너지를 가지나 열처리 온도가 증가할수록 계면접착에너지가 서서히 감소하였다. 4점굽힘시험 후 박리된 파면의 미세구조를 관찰 및 분석하여 내부의 파괴경로를 확인하였으며, X-선 광전자 분광법을 통하여 표면화학 결합상태를 분석한 결과 열처리 시 Ni-O와 Si-O 형태의 결합이 존재하여 약한 계면을 형성하기 때문인 것으로 판단된다. In order to develop electroless-plated Nickel Phosphate (Ni-P) as a contact material for high efficient low-cost silicon solar cells, we evaluated the effect of ambient thermal annealing on the degradation behavior of interfacial adhesion energy between electroless-plated Ni-P and silicon solar cell wafers by applying 4-point bending test method. Measured interfacial adhesion energies decreased from 14.83 to 10.83 J/<TEX>$m^2$</TEX> after annealing at 300 and <TEX>$600^{circ}C$</TEX>, respectively. The X-ray photoelectron spectroscopy analysis suggested that the bonding interface was degraded by environmental residual oxygen, in which the oxidation inhibit the stable formation of Ni silicide phase between electroless-plated Ni-P and silicon interface." @default.
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- W2068808434 date "2012-03-31" @default.
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- W2068808434 title "Interfacial Adhesion Energy of Ni-P Electroless-plating Contact for Buried Contact Silicon Solar Cell using 4-point Bending Test System" @default.
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- W2068808434 doi "https://doi.org/10.6117/kmeps.2012.19.1.055" @default.
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