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• W2068856773 abstract "This study examined the performance and reliability of HfO2 gate dielectrics in p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) capped with Al or Al2O3. The presence of Al capping deteriorated the pMOSFET scalability and channel mobility compared to Al2O3 capping. Al capping caused a higher rate of Al diffusion in the HfO2 dielectric layer, reducing the device performance and oxide thickness scaling. This degradation of the negative bias temperature instability of the Al-incorporated sample was attributed to decay of the interface quality rather than to a decrease in charge trapping in the bulk high-k dielectric." @default.
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• W2068856773 date "2012-10-01" @default.
• W2068856773 modified "2023-09-27" @default.
• W2068856773 title "Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors" @default.
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• W2068856773 doi "https://doi.org/10.1016/j.tsf.2012.02.039" @default.
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