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• W2068876894 abstract "The binding energy, E b , between a vacancy and a P atom or an As atom in Si is large. Therefore the pair diffusion model (PDM) and the decrease in quasi-vacancy formation energy are applicable to P and As diffusions. With the decrease in quasi-vacancy formation energy, E b also decreases. Fermi level obtained from the Boltzmann statistics is used. Anomalous diffusion of P consists of two components, a tail and a plateau. The tail has been attributed to excess vacancies, the generation of which is a characteristic of PDM. The plateau has been explained by PDM and the decrease in quasi-vacancy formation energy. The reason for this is given for the first time. It is emphasized that the large value of the phosphorus effective diffusion coefficient at the plateau is not anomalous but normal." @default.
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• W2068876894 date "1995-11-01" @default.
• W2068876894 modified "2023-10-16" @default.
• W2068876894 title "Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part One: Phosphorus" @default.
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• W2068876894 doi "https://doi.org/10.1143/jjap.34.5891" @default.
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