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• W2068879944 abstract "MBE-grown single-crystal Gd2O3 epitaxially on GaN has exhibited excellent thermal stability, withstanding rapid thermal annealing (RTA) at 1100 °C. The high-κ dielectric Gd2O3 thin film 10 nm thick has a monoclinic phase with a high degree of crystallinity, characterized by X-ray diffraction using synchrotron radiation. The orientation relationship is (4¯02)Gd2O3‖(0001)GaN and 〈010〉Gd2O3‖〈21¯1¯0〉GaN. Interface between Gd2O3 and GaN remains atomically sharp after the RTA, as demonstrated using X-ray reflectivity and high-resolution transmission electron microscopy. Gd2O3/GaN metal-oxide-semiconductor capacitors show well-behaved capacitance–voltage characteristics with small dispersion and hysterisis, a high dielectric constant of ∼17, and a low electrical leakage current density of 4.6×10−9 A/cm2 at 1 MV/cm." @default.
• W2068879944 created "2016-06-24" @default.
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• W2068879944 date "2009-03-01" @default.
• W2068879944 modified "2023-10-16" @default.
• W2068879944 title "High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties" @default.
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• W2068879944 doi "https://doi.org/10.1016/j.jcrysgro.2008.10.079" @default.
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