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• W2069002717 abstract "Abstract The pressure sensors currently available or that will be marketed in the near future pertain to the categories of capacitive and piezoresistive sensors. The basis of capacitive pressure sensors is a thin single-crystalline or polycrystalline silicon diaphragm. From a metrological point of view, these sensors are characterized by a high pressure sensitivity and a markedly low temperature sensitivity. They can operate up to temperatures of about 300 °C and remain almost free of hysteresis. On the other hand, they are non-linear, but their behaviour is fully determined by their normalized response. Piezoresistive sensors consist of silicon diaphragms on which strain—stress gauges are either deposited or implanted. The diaphragm acts as a stress amplifier. These sensors exhibit a linear response to low levels of stress. The monocrystalline silicon gauges are characterized by a pressure sensitivity two or three times greater than that of laser-recrystallized polysilicon gauges. The major problem encountered with piezoresistive sensors is their high temperature sensitivity, which has to be reduced by means of resistor compensation networks. The sensors with gauges diffused or implanted in the diaphragm should be able to operate up to 200 °C, whereas deposited gauges extend the temperature range up to 300 °C. The comparison of normalized responses indicates that the sensitivity to pressure of piezoresistive sensors is less than that of capacitive sensors. Among the other varieties of silicon pressure sensors, MOST gauge sensors as well as resonant sensors offer the advantage of giving a frequency-modulated output." @default.
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• W2069002717 date "1989-05-01" @default.
• W2069002717 modified "2023-10-18" @default.
• W2069002717 title "Capabilities and limits of silicon pressure sensors" @default.
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• W2069002717 doi "https://doi.org/10.1016/0250-6874(89)80026-5" @default.
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