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• W2069202343 abstract "The electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0nm films of HfON and HfSiON after a 1000°C-10s activation annealing. X-ray photoelectron spectroscopy was used to determine the chemical composition of the dielectrics. No evidence of crystallization was detected in 1.5nm HfON or HfSiON films after the activation annealing. The HfON film showed crystallization at a 2.0nm thickness whereas the 2.0nm HfSiON film remained amorphous." @default.
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• W2069202343 date "2006-07-17" @default.
• W2069202343 modified "2023-10-17" @default.
• W2069202343 title "Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics" @default.
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• W2069202343 doi "https://doi.org/10.1063/1.2226991" @default.
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