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• W2069243810 abstract "Processes of epitaxial growth have been investigated in situ by using ultra-high vacuum reflection electron microscopy (UHV REM). The evolution of surface morphology during cleaning treatments and homoepitaxial growth in the mode of two-dimensional nucleation is visualizec. Consecutive images of the growth of Ge pseudomorphic film on the Si(111) substrate are presented including the stage of three-dimensional nucleation. Two types of specific areas were found around three-dimensional islands." @default.
• W2069243810 created "2016-06-24" @default.
• W2069243810 creator A5063435664 @default.
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• W2069243810 date "1997-09-01" @default.
• W2069243810 modified "2023-10-17" @default.
• W2069243810 title "UHV reflection electron microscopy investigation of the monoatomic steps on the silicon (111) surface at homo- and heteroepitaxial growth" @default.
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• W2069243810 doi "https://doi.org/10.1016/s0040-6090(97)00096-5" @default.
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