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• W2069290439 endingPage "013501" @default.
• W2069290439 startingPage "013501" @default.
• W2069290439 abstract "Thin sputtered films of TiO2 of various thicknesses are characterized by their strain along the crystalline c−axis. The Raman B1g 519 cm−1 mode experiences a strong blue shift, whereas the Eg 144 cm−1 peak is at the standard position for all samples. The Raman intensity of the prominent Eg 144 cm−1 peak increases upon annealing at 300 °C, contrary to the integral intensity of XRD reflexes which remains constant. The half−width of the Eg 144 cm−1 peak is determined by the crystallite size. Dielectric modelling of the optical transmittance spectra indicates, for all samples, the existence of defect states leading to transitions 0.3−0.5 eV lower than the band gap. The growth process becomes stationary for a film thickness above 100 nm for rf−sputtered and above 200 nm for dc−sputtered films." @default.
• W2069290439 created "2016-06-24" @default.
• W2069290439 creator A5014762835 @default.
• W2069290439 creator A5043110170 @default.
• W2069290439 date "2013-07-07" @default.
• W2069290439 modified "2023-10-16" @default.
• W2069290439 title "Thickness dependence of the growth of magnetron-sputtered TiO₂ films studied by Raman and optical transmittance spectroscopy" @default.
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• W2069290439 doi "https://doi.org/10.1063/1.4811682" @default.
• W2069290439 hasPublicationYear "2013" @default.
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