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- W2069365890 endingPage "063001" @default.
- W2069365890 startingPage "063001" @default.
- W2069365890 abstract "Half-Heusler compounds are an impressive class of materials with a huge potential for different applications such as future energy applications and for spintronics. The semiconducting Heusler compounds can be identified by the number of valence electrons. The band gap can be tuned between 0 and 4 eV by the electronegativity difference of the constituents. Magnetism can be introduced in these compounds by using rare-earth elements, manganese or ‘electron’ doping. Thus, there is a great interest in the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. The combination of different properties such as superconductivity and topological edge states leads to new multifunctional materials, which have the potential to revolutionize technological applications. Here, we review the structure, the origin of the band gap and the functionalities of semiconducting half-Heusler compounds." @default.
- W2069365890 created "2016-06-24" @default.
- W2069365890 creator A5055630769 @default.
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- W2069365890 creator A5068324170 @default.
- W2069365890 creator A5080750294 @default.
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- W2069365890 date "2012-04-27" @default.
- W2069365890 modified "2023-10-16" @default.
- W2069365890 title "Half-Heusler compounds: novel materials for energy and spintronic applications" @default.
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- W2069365890 doi "https://doi.org/10.1088/0268-1242/27/6/063001" @default.
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